100 lines
3.4 KiB
C
100 lines
3.4 KiB
C
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/*
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* $Id: mtd-abi.h,v 1.7 2004/11/23 15:37:32 gleixner Exp $
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*
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* Portions of MTD ABI definition which are shared by kernel and user space
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*/
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#ifndef __MTD_ABI_H__
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#define __MTD_ABI_H__
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struct erase_info_user {
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uint32_t start;
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uint32_t length;
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};
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struct mtd_oob_buf {
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uint32_t start;
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uint32_t length;
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unsigned char *ptr;
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};
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#define MTD_ABSENT 0
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#define MTD_RAM 1
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#define MTD_ROM 2
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#define MTD_NORFLASH 3
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#define MTD_NANDFLASH 4
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#define MTD_PEROM 5
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#define MTD_OTHER 14
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#define MTD_UNKNOWN 15
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#define MTD_CLEAR_BITS 1 /* Bits can be cleared (flash) */
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#define MTD_SET_BITS 2 /* Bits can be set */
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#define MTD_ERASEABLE 4 /* Has an erase function */
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#define MTD_WRITEB_WRITEABLE 8 /* Direct IO is possible */
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#define MTD_VOLATILE 16 /* Set for RAMs */
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#define MTD_XIP 32 /* eXecute-In-Place possible */
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#define MTD_OOB 64 /* Out-of-band data (NAND flash) */
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#define MTD_ECC 128 /* Device capable of automatic ECC */
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#define MTD_NO_VIRTBLOCKS 256 /* Virtual blocks not allowed */
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/* Some common devices / combinations of capabilities */
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#define MTD_CAP_ROM 0
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#define MTD_CAP_RAM (MTD_CLEAR_BITS|MTD_SET_BITS|MTD_WRITEB_WRITEABLE)
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#define MTD_CAP_NORFLASH (MTD_CLEAR_BITS|MTD_ERASEABLE)
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#define MTD_CAP_NANDFLASH (MTD_CLEAR_BITS|MTD_ERASEABLE|MTD_OOB)
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#define MTD_WRITEABLE (MTD_CLEAR_BITS|MTD_SET_BITS)
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/* Types of automatic ECC/Checksum available */
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#define MTD_ECC_NONE 0 /* No automatic ECC available */
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#define MTD_ECC_RS_DiskOnChip 1 /* Automatic ECC on DiskOnChip */
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#define MTD_ECC_SW 2 /* SW ECC for Toshiba & Samsung devices */
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/* ECC byte placement */
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#define MTD_NANDECC_OFF 0 /* Switch off ECC (Not recommended) */
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#define MTD_NANDECC_PLACE 1 /* Use the given placement in the structure (YAFFS1 legacy mode) */
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#define MTD_NANDECC_AUTOPLACE 2 /* Use the default placement scheme */
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#define MTD_NANDECC_PLACEONLY 3 /* Use the given placement in the structure (Do not store ecc result on read) */
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#define MTD_NANDECC_AUTOPL_USR 4 /* Use the given autoplacement scheme rather than using the default */
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struct mtd_info_user {
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uint8_t type;
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uint32_t flags;
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uint32_t size; /* Total size of the MTD */
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uint32_t erasesize;
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uint32_t oobblock; /* Size of OOB blocks (e.g. 512) */
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uint32_t oobsize; /* Amount of OOB data per block (e.g. 16) */
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uint32_t ecctype;
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uint32_t eccsize;
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};
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struct region_info_user {
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uint32_t offset; /* At which this region starts,
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* from the beginning of the MTD */
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uint32_t erasesize; /* For this region */
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uint32_t numblocks; /* Number of blocks in this region */
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uint32_t regionindex;
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};
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#define MEMGETINFO _IOR('M', 1, struct mtd_info_user)
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#define MEMERASE _IOW('M', 2, struct erase_info_user)
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#define MEMWRITEOOB _IOWR('M', 3, struct mtd_oob_buf)
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#define MEMREADOOB _IOWR('M', 4, struct mtd_oob_buf)
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#define MEMLOCK _IOW('M', 5, struct erase_info_user)
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#define MEMUNLOCK _IOW('M', 6, struct erase_info_user)
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#define MEMGETREGIONCOUNT _IOR('M', 7, int)
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#define MEMGETREGIONINFO _IOWR('M', 8, struct region_info_user)
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#define MEMSETOOBSEL _IOW('M', 9, struct nand_oobinfo)
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#define MEMGETOOBSEL _IOR('M', 10, struct nand_oobinfo)
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#define MEMGETBADBLOCK _IOW('M', 11, loff_t)
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#define MEMSETBADBLOCK _IOW('M', 12, loff_t)
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struct nand_oobinfo {
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uint32_t useecc;
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uint32_t eccbytes;
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uint32_t oobfree[8][2];
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uint32_t eccpos[80]; /* RS 218 ECC */
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};
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#endif /* __MTD_ABI_H__ */
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